Semiconductor field effect transistor device and fabrication thereof.

摘要

A semiconductor device comprising a semiconductor substrate (1) having therein channel regions; a gate dielectric layer (2) over the channel region; gate electrodes (3) over the gate dielectric layer; doped regions (4, 5) self-aligned with respect to the gate electrodes (3); isolation trenches (6) containing isolating material (7); isolation material (8) on the sides of the gate electrodes which are self-aligned in the width direct such that the gates (3) butt against the trenches (6) without overlap; an insulation layer (13) through which contact windows are etched; and finally metallic-type high conductivity electrical inter-connects (14) to the gate electrodes (3) and the source and drain regions (4, 5); are provided. Also, a method for fabricating such devices is provided. <IMAGE>