发明名称 SEMICONDUCTOR CIRCUIT
摘要 PURPOSE:To enable the operation at a low power consumption and to keep the output high level in almost the power supply potential, by increasing the gate voltage of a transistor to the voltage exceeding the power supply voltage via capacity and holding the gate voltage. CONSTITUTION:An inverter 21, high voltage generating circuit 22 and gate input circuir 23 are provided. A signal phi21 is at high level, a transistor 26 is conductive, and at the same time a signal phi22 is at a low level, and transistor 27 is cut off. In this case, the voltage at the output node 29 is increased and the signal phi23 is at high level with a delay of DELTAt seconds, allowing to further increase the voltage at the output point 29 through a feedback capacity 28, and the voltage is a voltage in excess of the power supply voltage VCC. When a high voltage generating circuit is connected to the output node 29, the voltage at the node 29 is not lowered. Thus, the circuit is operated with low power consumption and the output high level can almost be kept in the power supply potential.
申请公布号 JPS5683131(A) 申请公布日期 1981.07.07
申请号 JP19790160557 申请日期 1979.12.11
申请人 NIPPON ELECTRIC CO 发明人 FUJITA HIDEO;TOKUSHIGE KAZUO
分类号 H03K19/096;(IPC1-7):03K19/096 主分类号 H03K19/096
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