| 摘要 |
PURPOSE:To improve data holding characteristic without increasing steps while alleviating a step of a peripheral circuit by flattening a memory cell. CONSTITUTION:A polycrystalline Si film 25 for a plate electrode of a capacitor 33 is first patterned only in a memory cell 13. The film 25 of a peripheral circuit 17 is used as a stopper in the case of wet etching a BPSG film 27 of the circuit 17, and then patterned with the same mask as that of the film 27. Thus, an SiN film by a reduced pressure CVD method is not used as a stopper, and an additional lithography step is not required. |
