| 摘要 |
<p>PURPOSE:To increase the humidity resistance of a thin film semiconductor device by a method wherein the total number of hydrogen atoms bonded to the respective atoms of nitrogen atoms and silicon atoms in a silicon nitride film which is used as an insulating layer film which is located on a semiconductor layer and metallic electrodes, is set in such a way as to become a specified atomic % or lower. CONSTITUTION:A Cr gate electrode 2 is formed on a glass substrate 1 and thereafter, a hydrogenerated amorphous silicon nitride film 3, an amorphous silicon layer 4 and a N<-> layer 5 are deposited in order and continuously on the whole surface by a plasma CVD method. Then, an aluminium film is deposited on the whole surface and source and drain electrodes 6 and 7 are formed using a photosensitive resist 8. Then, after the layer 5 is etched in a prescribed depth by a RIE method using the photosensitive resin 8 as a mask, the resist 8 is peeled. Then, a TFT undergoes an inter-element isolation by etching using an RIE method and a protective layer 10 which is a silicon nitride film is deposited on the whole surface. At this time, the density of hydrogen atoms bonded to the respective atoms of nitrogen atoms and silicon atoms in the silicon nitride film is set in such a way as to become 35 atomic %. Thereby, a thin film semiconductor device having a durability and a stability is easily obtained.</p> |
