| 摘要 |
<p>PURPOSE:To obtain more than or equal to 85% of polar deflection by making hetero-junction between a first and a second compound semiconductor layers having different lattice constants, and determining each lattice constant to make the energy levels of sub-bands of heavy holes and light holes of the second layer which generates polarized electron beam larger than heat noise energy. CONSTITUTION:On for example, a P-type GaAs substrate 12 doped with Zn and having 5X10<18>/cm<3> of a carrier concentration and about 350mum thickness, a first P-type GaAs layer 14 which is a P-type GaAs having the same carrier concentration and 2.0mum thickness and a second P-type GaAs layer 16 which is the same as layer 14 but whose thickness is 0.08mum are successively formed and grown. In this way, the thickness of the layer 16 is made thicker than the critical layer thickness to carry out coherent growth, so that the lattice constants of the layers 14, 16 differ each other by about 0.6% and while lattice strain is formed in the layer 16, hetero-junction is formed on the layer 14. An energy level is thus generated in the heavy and light sub-band in the valence band of the layer 16.</p> |
