| 摘要 |
An emission enhanced sputtering magnetron apparatus includes an elongated rod or bar like cathode jacketed by a target material. An electron emission enhancement device positioned around the end of the elongated cathode creates a thin, highly uniform plasma sheath along the remainder of the cathode, thereby enhancing the sputtering rate along the entire length of the cathode target material. A low voltage, high current AC or DC magnet supply connected across the elongated cathode generates a plasma-confining magnetic field circumferentially around the entire length of the cathode. In an alternate embodiment, a single elongated tube or bar of the target material can be conformed into the cathode, the electron emission enhancing device, and a working end portion that can be formed into nearly any shape to conform to the shape of the surface being coated with the target material. |
