| 摘要 |
PURPOSE:To manufacture nitrogen atom containing GaAs1-xPx epitaxial wafers having high quality PN junction within a relatively short time. CONSTITUTION:In order to vapor phase epitaxial growth a GaAs1-xPx (0.4<=x<=0.9) having PN junction on a GaP single crystal substrate, the partial pressure of Ga component and that of phosphorus and arsenic components during the epitaxial growth step of a nitrogen atom containing N-type Ga1-xPx are specified to be 0.003 or 0.02atm while the partial pressure of Ga component and that of phosphorus and arsenic components during the epitaxial growth step of nitrogen atom containing P-type GaAs1-xPx are specified to be 0.01 or 0.05atm. Thus, a P-type layer in sufficient thickness for efficiently emitting the light inside a crystal can be grown meeting the requirement for small diffusion. Through these procedures, the light emitting diode in orange, yellow color, etc., having almost the same luminance for the outdoor application as that of the lilght emitting diode manufactured using the crystal grown by a liquid phase process can be manufactured within a relatively short time. |
