发明名称 |
Semiconductor laser device |
摘要 |
A semiconductor laser device includes a first cladding layer, an active layer, and a second cladding layer with a central ridge on a substrate. A current blocking layer is disposed on the second cladding layer burying the ridge. A contact layer is disposed on the current blocking layer and the ridge. The portion of the second cladding layer adjacent to the active layer has a greater resistivity than a portion of the second cladding layer remote from the active layer, reducing leakage current.
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申请公布号 |
US5164951(A) |
申请公布日期 |
1992.11.17 |
申请号 |
US19910718974 |
申请日期 |
1991.06.21 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KAGAWA, HITOSHI;YAGI, TETSUYA |
分类号 |
H01S5/00;H01S5/223 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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