| 摘要 |
<p>PURPOSE:To prevent an increase in standby current and an occurrence of malfunction by preventing a charge flow from the drain side node to the back gate side of the transistor(TR), which is located in a reference potential generating circuit, in a prescribed operating condition through the use of a potential difference preventing circuit. CONSTITUTION:When an input terminal V1 changeover signal is changed over from a ground potential VSS to a power supply potential VCC, a first operating condition becomes a second operating condition, N, P types TRN13 and P13 are turned on, an N type TRN14 is turned off, an N type TRN15 is turned on, nodes 15 and 11 becomes the potential VSS, nodes 13 and 14 becomes the potential VCC and an output terminal Vout is fixed to the potential VSS. At the time, a back gate side node 12 of the substrate is raised to the potential VCC by a P type TRP35 of the potential preventing circuit, the potential difference between the N type TR11 drain and the node 12 of the reference potential generating circuit is controlled and no charge flows from the drain to the node 12. Thus, an increase in standby current and an occurrence of malfunction in other circuits are prevented.</p> |
