发明名称 FORMATION OF PATTERN
摘要 PURPOSE: To prevent the generation of residue due to a shift of a focus at the time of exposure by incorporating specified 1,2-quinonediazidosulfonic ester and a specified compd. CONSTITUTION: A layer is formed by coating with a radiation sensitive resin compsn. contg. 1,2-quinonediazidosulfonic ester of a resin having phenolic hydroxyl groups and contg. <=12wt.% low mol.wt. component having a mol.wt. of <=600 (expressed in terms of polystyrene) and a compd. selected from among an org. acid, its salt, its halogenide and a compd. generating an acid when irradiated. Only a selected part of the layer is irradiated, the layer is treated with a silylating agent and this agent is selectively absorbed in the irradiated part and allowed to react. The layer is then dry-developed by anisotropic oxygen plasma etching to selectively remove the unirradiated part of the layer. Thereby a low mol.wt. component in the resin is reduced.
申请公布号 JPH04328556(A) 申请公布日期 1992.11.17
申请号 JP19910122933 申请日期 1991.04.26
申请人 JAPAN SYNTHETIC RUBBER CO LTD;U C B J S R ELECTRON SA 发明人 TAKAHASHI TOSHIHIKO;YANAGIHARA KENJI;BURUUNO ROORANDO;JIEE BUANDENDERITSUSA
分类号 G03F7/023;G03F7/029;G03F7/36;G03F7/38;H01L21/027;H01L21/302;H01L21/3065 主分类号 G03F7/023
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