发明名称 Heat treatment apparatus and method of forming a thin film using the apparatus
摘要 A heat treatment apparatus having a reaction furnace including a reaction chamber for accommodating a plurality of objects, major surfaces of which are faced to each other at intervals, and a heater provided outside the reaction chamber, gas supply tube for introducing a gas into the reaction chamber therethrough, flow-directing unit for directing gas flow in a first direction substantially parallel to the surfaces of the objects, gas exhaust tube for exhausting a gas outside the reaction chamber, and moving unit for moving the gas flow in a second direction different from the first direction. A method of forming thin films on objects of heat treatment having the steps of causing a first gas flow introduced from a first gas supply tube and a second gas flow introduced from a second gas supply tube to meet each other, thereby producing a third gas flow flowing in a direction substantially parallel to the surfaces of the objects, major surfaces of which are faced to each other at intervals, disposed in a reaction chamber, and controlling flow rate of the first and second gas flows, thereby moving the position of the third gas flow in a second direction different from the first direction.
申请公布号 US5164012(A) 申请公布日期 1992.11.17
申请号 US19900635209 申请日期 1990.12.28
申请人 TOKYO ELECTRON LIMITED 发明人 HATTORI, HISASHI
分类号 H01L21/223;C23C16/24;C23C16/44;C23C16/455;C30B25/14;H01L21/205;H01L21/22;H01L21/31 主分类号 H01L21/223
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