| 摘要 |
An apparatus for protecting against overvoltage includes a semiconductor switching element and a trigger element. The semiconductor switching element is formed of a PNPN junction including a plurality of PN junctions and the trigger element has a characteristic similar to that of a PN junction Zener diode. The apparatus for protecting against overvoltage is normally nonconductive; however, once an overvoltage not lower than a defined level is applied, the trigger element attains a state so as to have a gate current flow from a gate electrode thereof to the semiconductor switching element. In response to this, the semiconductor switching element causes a so-called thyristor phenomenon, thereby protecting a load connected in parallel to the apparatus for protecting against overvoltage, i.e., an object to be protected, from being provided with the overvoltage.
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