| 摘要 |
PURPOSE:(1) To contrive the fine formation of a wiring, (2) to contrive a reduction in consumption power, (3) to improve the resistance to a soft alpha ray soft error, (4) to facilitate the connection of a MISFET for memory cell selection use with a capacitor element for information storage and (5) to realize the simplification of the manufacturing method of a semiconductor integrated circuit device and to contrive the improvement of the yield of the device in the device provided with a DRAM. CONSTITUTION:A semiconductor integrated circuit device provided with a DRAM is provided with (a) a semiconductor substrate 21 having small holes 28, (b) an insulating film 29 on the bottoms and sidewalls of the holes 28, (c) electrodes 30, to which a fixed potential is applied, on the film 29, (d) an insulating film 32 on the electrodes 30, (e) electrodes 33 on the film 32, (f) electrodes 36 on the surface of the substrate 21 and (g) semiconductor regions SR and electrodes 42 to connect the regions SR with the electrodes 33. |
