发明名称 |
Fabricating a low leakage current LED |
摘要 |
A method of reducing the leakage current of a III-V compound semiconductor device (10) includes providing the device with a confinement layer having two sections (13, 14). A first section (14) has a higher doping concentration than a second section (13). An energy barrier that confines minority carriers to an active layer (12) of the device (10) is formed by diffusing a dopant into a portion of the active layer (12) and the two sections (13, 14) of the confinement layer. During the diffusion, the conductivity type of a portion of the lower doped second section (13) is inverted while the higher doped first section (14) is not inverted.
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申请公布号 |
US5164329(A) |
申请公布日期 |
1992.11.17 |
申请号 |
US19910767956 |
申请日期 |
1991.09.30 |
申请人 |
MOTOROLA, INC. |
发明人 |
MOYER, CURTIS D.;VOIGHT, STEVEN A. |
分类号 |
H01L21/76;H01L33/00;H01L33/30;H01S5/227;H01S5/30;H01S5/32 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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