发明名称 X-RAY LITHOGRAPHY MASK
摘要 The X-ray lithography mask for preventing the distortion phenomena of pattern comprises a frame (21) for protecting and maintaining the transparent substrate (22); a transparent substrate having a high transmittance on X-ray; a X-ray absorption layer formed on the transparent substrate in a stripe form; a stress buffer layer for burying the X-ray absorption layer. The frame material is silicon or glass of ring-form for dimensional stability. The SiC or SiNx having a similar heat expansion with the frame material is used as the transparant substrate. The X-ray absorption layer acting as the mask pattern is composed of metal substances of 0.5 μm thickness.
申请公布号 KR920010064(B1) 申请公布日期 1992.11.13
申请号 KR19890005231 申请日期 1989.04.20
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG, HO - YONG
分类号 G03F1/22;G03F7/20;H01L21/027;H01L21/08 主分类号 G03F1/22
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