发明名称 |
X-RAY LITHOGRAPHY MASK |
摘要 |
The X-ray lithography mask for preventing the distortion phenomena of pattern comprises a frame (21) for protecting and maintaining the transparent substrate (22); a transparent substrate having a high transmittance on X-ray; a X-ray absorption layer formed on the transparent substrate in a stripe form; a stress buffer layer for burying the X-ray absorption layer. The frame material is silicon or glass of ring-form for dimensional stability. The SiC or SiNx having a similar heat expansion with the frame material is used as the transparant substrate. The X-ray absorption layer acting as the mask pattern is composed of metal substances of 0.5 μm thickness. |
申请公布号 |
KR920010064(B1) |
申请公布日期 |
1992.11.13 |
申请号 |
KR19890005231 |
申请日期 |
1989.04.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG, HO - YONG |
分类号 |
G03F1/22;G03F7/20;H01L21/027;H01L21/08 |
主分类号 |
G03F1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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