| 摘要 |
PURPOSE:To enable wiring under a substrate (rear) while the diffusion of impurities from the contact hole side into a surface silicon layer of a stuck substrate is prevented. CONSTITUTION:In an SOI substrate formed by mutually sticking silicon substrates, a bit line 3 is formed under a silicon layer 1 for forming elements. When impurities are introduced into the bit line 3, a resist layer 20 is formed on a contact hole 5 and its periphery in which contact hole polycrystalline silicon layer 6 for electrically connecting the bit line 3 with the silicon layer 1 is buried. Thereby impurities are prevented from being introduced into at least the region in contact with the polycrystalline silicon layer 6 for connection use. |
