| 摘要 |
PURPOSE:To dissolve such problems that a resist is left in a groove-like section on a base substrate due to insufficient exposure and that the dimension control of an opening at a large level-difference section on the base substrate becomes difficult. CONSTITUTION:After a positive resist 101 is selectively formed on a pattern forming substrate 102, a negative resist 103 is formed on the entire surface of the substrate 102. Then the resist 103 is etched until the pattern top 104 of the resist 101 crops out. After etching the resist 103, only the positive resist 101 is removed by using a negative resist developing solution having a small selection ratio against the positive resist 101. |
