| 摘要 |
<p>PURPOSE:To improve characteristics of a transistor by approaching a threshold voltage of the transistor to a 0 volt so as to eliminate defects in the characteristics such as a deviation of the threshold voltage, slowing of a rise, a decrease in reliability due to formation of a defective level in a boundary between a semiconductor film and a gate insulating film in a self-alignment type active matrix board to be used for a liquid crystal driving element. CONSTITUTION:In a self-alignment type thin film transistor, a newly electrically insulated electrode 13 is provided in gate insulating films 12, 14 for isolating a semiconductor thin film 11 and a gate electrode 15.</p> |
