发明名称 |
VERFAHREN ZUR HERSTELLUNG EINER VERBINDUNG ZU EINEM KONTAKTSTIFT AUF EINER INTEGRIERTEN SCHALTUNG UND ZUGEHOERIGE KONTAKTSTRUKTUR. |
摘要 |
Process for forming a contact in relief on an aluminium pin of an integrated circuit, comprising the following steps: providing a conductive polycrystalline silicon layer (23) beneath the aluminium pin (21); locally removing the aluminium layer so as to reveal part of the surface of the polycrystalline silicon layer; establishing a connection with the polycrystalline silicon layer by means of a drop of conductive adhesive (30). …<IMAGE>… |
申请公布号 |
DE3875174(D1) |
申请公布日期 |
1992.11.12 |
申请号 |
DE19883875174 |
申请日期 |
1988.07.13 |
申请人 |
SGS-THOMSON MICROELECTRONICS S.A., GENTILLY, FR |
发明人 |
GLOTON, JEAN-PIERRE, F-13100 AIX EN PROVENCE, FR |
分类号 |
H01L21/60;H01L23/485;H01L23/532 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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