发明名称 FORMATION OF RESIST LAYER FOR PROCESSING
摘要 PURPOSE:To eliminate the possibility that grains, hillocks, voids, etc., are generated on a surface to be processed or layer to be processed as a heat treatment at a high temp. which is heretofore needed to form a crosslinked resist layer in the method for forming the resist layer for processing by forming the crosslinked resist layer on the surface to be processed or the layer to be processed and forming the resist layer patterned from this resist layer as the resist layer for processing. CONSTITUTION:The crosslinked resist layer 5 in the above-mentioned method for forming the resist layer for processing is formed by (i) forming the resist layer 4 to be crosslinked by receiving the irradiation with X-rays or electron rays on the surface to be processed or the layer to be processed and irradiating this layer with light, X-rays or electron rays 9 or (ii) forming the resist layer to be crosslinked by receiving the irradiation with the light, X-rays or electron rays and being subjected to heat treatment, then irradiating this layer with the light, X-rays or electron rays and subjecting the layer to the heat treatment.
申请公布号 JPH04322253(A) 申请公布日期 1992.11.12
申请号 JP19910118065 申请日期 1991.04.22
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 KAWAI YOSHIO;TANAKA HARUYORI;MATSUDA KOREHITO
分类号 G03F7/26;H01L21/027;H01L21/302;H01L21/3065 主分类号 G03F7/26
代理机构 代理人
主权项
地址