发明名称 FAST MEMORY SYSTEM EMPLOYING MOSTLY GOOD MEMORIES
摘要 A memory system (10) for use with a processor (12) which provides a memory bus (14) and an address bus (38). The inventive system includes a plurality of mostly good memory blocks (21-36) connected to the address bus (38), each block having a defect at a defect address. A programmable memory (PROMs A and B) is connected to the processor memory bus (14) for storing the addresses of the defects in the mostly good memories (21-36). A redundant memory (42 and 44) provides rows and columns of good memory at addresses corresponding to the addresses of the defects in the mostly good memories (21-36). A selector controller (40) selectively activates the redundant memory when an address is placed on the memory bus (14) which corresponds to an address of a defect in one of the mostly good memories (21-36).
申请公布号 WO9220068(A1) 申请公布日期 1992.11.12
申请号 WO1991US03184 申请日期 1991.05.07
申请人 SOPHOS TECHNOLOGIC 发明人 KAHN, ILYA
分类号 G11C29/00 主分类号 G11C29/00
代理机构 代理人
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