Method for low temperature bonding of silicon and silicon on sapphire and spinel to nickel and nickel steel and apparatus using such a bonding technique

摘要

A method for low temperature bonding of silicon and silicon on sapphire and spinel to nickel and nickel steel using a layered structure with an aluminum interface between the nickel or nickel steel and the silicon. The bonding is achieved in a reducing atmosphere using a temperature of 640 to 650 degrees C. with a pressure of 100 to 150 psi on the layered structure for a period of approximately five minutes with a subsequent cooling to avoid strains in the bond. An example of the transducer apparatus utilizing such a bonding technique includes a nickel steel housing and a silicon on spinel transducer wafer having a silicon peripheral pad with an aluminum layer bonding the silicon pad to the nickel steel housing.