| 摘要 |
PURPOSE:To obtain a semiconductor device where many interconnections having a line width of 1mum or lower can be arranged and installed in parallel by a method wherein an upper-layer-side interconnection and a lower-layer-side interconnection in adjacent layers are arranged and installed so as to be overlapped on a plane. CONSTITUTION:A lower-layer-side interconnection 2 and a layer insulating film 3 are formed; after that, they are coated with a photoreactive substance; a resist layer 4 is formed; a mask 5 is arranged at its upper part. When light 6 is irradiated from the upper part of the mask 5, a part 4a, irradiated with the light 6, in the resist layer 4 is hardened. Consequently, when the light 6 is irradiated, an unhardened part 4b is removed, an upper-layer-side interconnection 1 is formed in the part, and a multilayer interconnection is completed. Since the lower-layer-side interconnection 2 and the part 4b not irradiated with the light 6 are overlapped partially on a plane, the right shoulder part of the lower-layer-side interconnection 2 is not irradiated with the light 6. Consequently, it is eliminated that the part 4b is irradiated with reflected light and that the part is hardened as different from conventional devices. Any defect is caused at all in the upper-layer-side interconnection 1 in which the part 4b is formed, and an interconnection according to a desired line width can be formed. |
