发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 PURPOSE:To obtain an electrode not becoming inoperative even under high temperature and high moisture by forming a Ti-Pd alloy or Ti-V alloy layer and noble metal layer defined in composition and thickness on an electrode wiring metallic layer when using material containing aluminum as main ingredient for the metallic layer. CONSTITUTION:An SiO2 film 16 is covered on an Si substrate 11, a window is opened thereat, an aluminum layer 12 is extended on the film 16 to contact with the substrate 11, an SiO2 film 17 is covered on the entire surface, a window is again opened while being disposed on the layer 12, and a prescribed electrode is mounted on the layer 12. Ti-Pd alloy containing 0.01-5% of Pd or Ti-V alloy containing 0.01-10% of V is employed for the metallic material covered on the exposed layer 12 in this configuration, and the thickness is specified to 1,000-3,000Angstrom . Further, an Au layer 15 is formed through a Pt layer 14 thereon as a laminated electrode structure. Thus, the reliability of the device cannot be lowered even if it is allowed to stand at approx. 80 deg.C and approx. 90% of humidity for.
申请公布号 JPS5688359(A) 申请公布日期 1981.07.17
申请号 JP19790165500 申请日期 1979.12.21
申请人 TOKYO SHIBAURA ELECTRIC CO 发明人 KOBAYASHI KEIJI;MOTOHARA HIROFUMI
分类号 H01L21/60;H01L21/3205;H01L23/485;H01L23/52 主分类号 H01L21/60
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