MOS TYPE SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE:To enable the contact region of source/drain electrode to be miniaturized to the region not exceeding submicron level while restraining the hot carrier deterioration and increasing the driving capacity. CONSTITUTION:A gate electrode 5 is formed on one main surface of the first conductivity type semiconductor substrate 1 between the second conductivity type low concentration diffused layers 3 through the intermediary of a gate oxide film 4 so that the effective channel length may be almost equalized to miniaturize the region not to exceed submicron level. Besides, the second conductivity type diffused layer 7A is formed on the side parts of the gate electrode 5 and above the low concentration diffused layers 3 in contact therewith through the intermediary of a thin insulating film 6 so as to sufficiently relieve the high electric field while restraining the hot carrier occurrence and stiffening the deterioration resistance. Furthermore the second conductivity type high resistant diffused layer 7A is controlled on the side parts of the gate electrode 5 so that the source resistance may be lessened while increasing the driving capacity as well as miniaturizing the contact region of source/drain electrodes.