FIELD EFFECT TRANSISTOR WITH INTERNAL MATCHING CIRCUIT,申请号JP19910001387-传众专利搜索

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发明名称	FIELD EFFECT TRANSISTOR WITH INTERNAL MATCHING CIRCUIT
摘要
申请公布号	JPH04321308(A)	申请公布日期	1992.11.11
申请号	JP19910001387	申请日期	1991.01.10
申请人	NEC CORP	发明人	SHIOZAKI OSAMU
分类号	H01P5/08;H03F3/60	主分类号	H01P5/08
代理机构		代理人
主权项
地址

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