发明名称 PATTERN FORMATION METHOD
摘要 PURPOSE:To get a high-resolution resist pattern which has a rectangular shape without decrease of a resist film. CONSTITUTION:A volatile material 1, which has shading property to an exposure X ray and volatilizes when the X ray is applied, is overlaid on a resist 2, and then the pattern is exposed. In the section abundant in the quantity of exposure, the volatile material 1 volatilizes immediately, and the resist is exposed, so the drop of quantity of applied light is small. On the other hand, in the section poor in the quantity of exposure, that volatile material 1 does not readily volatilize and the quantity of light which has reached the resist decreases sharply by the shading property. Accordingly, the X rays which have turned into the shading part, can be reduced enough, and it follows that the resolution improves.
申请公布号 JPH04318914(A) 申请公布日期 1992.11.10
申请号 JP19910110758 申请日期 1991.04.17
申请人 SOLTEC:KK 发明人 TANAKA TOSHIHIKO;OKADA KOICHI;ATODA NOBUFUMI
分类号 G03F7/004;G03F7/095;G03F7/20;G03F7/26;H01L21/027 主分类号 G03F7/004
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