发明名称 COMBINED CIRCUIT OF SENSE AMPLIFIER AND LATCHING CIRCUIT
摘要 <p>PURPOSE: To require only one gating signal at the time of an operation and to provide an important growing ability and porosity performance. CONSTITUTION: A first stage contains a master latch(ML) and a second stage a slave latch. They are detached by a third control device (TG5). The free end of the PFET device of the master latch is connected to first supply voltage (Vdd), and the free end of an NEFT device is point-connected for forming a common node (K). A reference generator 23 connects the common node (K) to second supply voltage (GND) or reference voltage (VREF). A control device and a VREF generator are driven by a single setting sense amplifier signal(SSA). During an operation, both stages are alternately selected by the SSA signal and the prescribed stage holds previous data while the different stage operates.</p>
申请公布号 JPH04319600(A) 申请公布日期 1992.11.10
申请号 JP19920019881 申请日期 1992.02.05
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 FURANSHISU BUREDEIN;TEIERII KANTEIAN;PIEERU KOTSUPENZU
分类号 G11C17/18;G11C7/06;G11C7/10;H03K3/3562 主分类号 G11C17/18
代理机构 代理人
主权项
地址