| 摘要 |
<p>PURPOSE: To provide an improved manufacturing method of a grid or electron source of an electric field emitter. CONSTITUTION: A substrate 3 is coated on a conducting layer 5 to form a chip having an apical angle of 90 degrees. Then, a chip array is coated on a dielectric layer 7 to the extent compared with the height of the chip, thus forming a nearly spherical salient vessel 9. A conducting grid layer 11 is coated thereon and further a resist material layer 13 having low viscosity is coated on the layer 11 in such a manner that the layer 11 is exposed in the area of the salient vessel 9. Then, a layer covering the salient vessel 9 is eliminated by etching and further the layer 13 is eliminated. Thereafter, an exposed portion of the layer 7 is eliminated by etching to form an open hole encircled with collars of material of the layer 11. Thus, the chip is exposed through the open hole formed in the layers 7 and 11. According to this method, the open hole of the dielectric layer 7 is automatically aligned with that of the grid layer 11, and hence, there is no need of an open hole positioning process using a lithography method.</p> |
