| 摘要 |
PURPOSE:To realize a simple structure, reduce the size of an oscillating transformer and stably control an insulation gate type bipolar transistor(IGBT). CONSTITUTION:The gate drive voltage of an IGBT which is connected to a flashing discharge tube Xe to perform emission control is obtained by rectifying reverse voltage developed at the primary coil TFa end of an oscillating transformer TF in an oscillation section 30 to generate AC voltage from input DC voltage and charging the same into an electrolytic capacitor C3. The charged voltage is supplied to the gate of the IGBT through a switching transistor Q5 to perform IGBT switching during flash light emission. |
