发明名称 ECL to CMOS level conversion circuit
摘要 A level conversion circuit has an input buffer circuit which includes bipolar transistors and a complementary type inverter circuit which includes a P-channel first field effect transistor and an N-channel second field effect transistor. An input signal having a small amplitude is inputted to directly a gate terminal of the first field effect transistor and to a gate of the second field effect transistor through a coupling capacitor with no time delay. The complementary type inverter circuit outputs an output signal having a large amplitude. The coupling capacitor is interposed between the gates of the first and second field effect transistors forming the inverter circuit and this arrangement enables the level conversion circuit to operate at a high speed and at a reduced power consumption.
申请公布号 US5162677(A) 申请公布日期 1992.11.10
申请号 US19910667491 申请日期 1991.03.11
申请人 NEC CORPORATION 发明人 TAKAHASHI, HIROYUKI
分类号 H03K19/017;H03K19/0175;H03K19/0185;H03K19/0944 主分类号 H03K19/017
代理机构 代理人
主权项
地址