| 摘要 |
PURPOSE:To make rising action faster in flash light emission from a flashing discharge tube without a delay. CONSTITUTION:In rising action such that emission start voltage is supplied from an insulation gate type bipolar transistor(IGBT) emission control section 34 to a gate to lead the IGBT to an ON state (continuity), the emission start voltage is supplied through a capacitor C4 and a resistor R9, and emission start voltage is supplied through a feeding resistor R8 after the capacitor C4 is charged. In rising action such that the IGBT is turned OFF, the electric charges of the capacitor C4 flow through a resistor R10, a Zener diode ZD 2 and the resistor R9 to discharge a floating capacity of charges in between the gate of the IGBT and an emitter, so that reverse bias is applied to the gate of IGBT. |
