| 摘要 |
PURPOSE:To improve the packing density, performance and versatility of a semiconductor device by dry-etching a first film with a second film as a mask to form fine contact holes and bias having a large aspect ratio. CONSTITUTION:A film 2 composed mainly of silicon dioxide is etched to open contact holes 7 using a mask made of a polycrystalline silicon film 3 with a pattern transferred. The diameter of the thinnest part of the thinnest contact hole is 0.1 micron. The polycrystalline silicon on the opening of the contact hole 7 has a tapered portion formed by physical sputtering. A tungsten film 8 is deposited on the entire surface by CVD and patterned for a wiring layer. Since the contact hole, 0.1mum in diameter and 0.4mum in depth, has a tapered end, it is easy to form a metallized interconnection in the contact hole. |
