| 摘要 |
<p>PURPOSE:To eliminate dislocation between a high concentration P-type semiconductor region and the opening of a metal electrode film, and to simplify manufacturing process. CONSTITUTION:In a semiconductor electron emitting device provided with a metal electrode film 106 having an opening part, the electrode film 106 is used as a mask for ion implantation for forming a high concentration P-type semiconductor region 108.</p> |
