| 摘要 |
PURPOSE:To obtain a method for manufacturing an infrared detector in which uniform pixels are integrated in a high density in a crystalline structure. CONSTITUTION:A p-type CdHgTe layer 2 is formed on a CdTe substrate 1, an insulating film 4 is formed thereon, the film 4 on the layer 2 of a part which is operated as a function of a pixel is removed, and a mask pattern is formed. Then, an In layer 7 is formed, the film 4 and the layer 7 on the layer 2 of a part to become a non-pixel region 2a are removed, and In is diffused from the layer 7 by heat treating to form an n-type CdHgTe layer 3. Thereafter, the film 4 and the layer 7 are removed, and then, an insulating film 10 is formed on the entire surface of a wafer. In this case, conversion of the region 2a to n type due to extraction of Hg from the exposed layer 2 is prevented. |
