BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

Disclosed is a method for manufacturing a high speed bipolar transistor having vertically an emitter zone, a base zone and a collector zone comprising steps of: shielding an active region; forming a bird's beak as a spacer by a field oxidation and etching; forming a base terminal; forming an emitter zone; and metallizing. By the method, a minimum spacing is effectively achieved between the base terminal and the emitter zone of the transistor by utilizing a bird's beak as a spacer by which an exact self alignment between the base terminal and the emitter zone is naturally effected.