发明名称 Liquid phase epitaxial growth of high temperature superconducting oxide wafer
摘要 This invention provides a method of manufacturing of a superconducting oxide wafer in which a plural system oxide superconducting single crystal thin film is grown by the liquid epitaxy process using the flux on a crystal substrate.
申请公布号 US5162297(A) 申请公布日期 1992.11.10
申请号 US19880205177 申请日期 1988.06.10
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TERASHIMA, KAZUTAKA;FUKUDA, KATSUYOSHI
分类号 C30B19/02;H01L39/24 主分类号 C30B19/02
代理机构 代理人
主权项
地址