发明名称 |
Liquid phase epitaxial growth of high temperature superconducting oxide wafer |
摘要 |
This invention provides a method of manufacturing of a superconducting oxide wafer in which a plural system oxide superconducting single crystal thin film is grown by the liquid epitaxy process using the flux on a crystal substrate.
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申请公布号 |
US5162297(A) |
申请公布日期 |
1992.11.10 |
申请号 |
US19880205177 |
申请日期 |
1988.06.10 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TERASHIMA, KAZUTAKA;FUKUDA, KATSUYOSHI |
分类号 |
C30B19/02;H01L39/24 |
主分类号 |
C30B19/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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