| 摘要 |
PURPOSE: To perform a joint which is not accompanied with stresses due to thermal mechanism, and not limited by the kind of silicon member used by forming a thin layer of semiconductor material on at least one surface which is to be jointed. CONSTITUTION: An aluminum thin layer 2 is formed in vacuum on the upper surface of a silicon wafer 1, and a germanium thin layer 3 over the thin layer. A silicon wafer 1 is applied with a press-contacting force, and then heated, so that the germanium layer 3 forms an alloy in a diffusion process at the interface with respect to the layer 2. The alloy grows, with layer thickness of the layer 2 and the layer 3 being appropriately selected, into an eutectic 4 of aluminum and germanium with a lapse of time. Thereby, a standard semiconductor element 5 is sealed up in the silicon wafer 1. |
