| 摘要 |
PURPOSE:To form resist patterns having good etching resistance by suppress the film decrease of the resist patterns. CONSTITUTION:Plural light shielding patterns 5 are formed on one main surface side of a transparent substrate 4. Further, antireflection coating 10 of >=15% and >=40% reflectivity are formed on the respective light shielding patterns 5. A part of light L4 is reflected toward the resist film by the antireflection coating 10 and the generation of the film decrease is prevented. The resist patterns having the excellent etching resistance are thus formed. |
