发明名称 SEMICONDUCTOR DRIVING CIRCUIT
摘要 PURPOSE:To speed up and simultaneously to prevent the slow down of the operations during a low voltage operation by controlling the gate of a load driving MOS transistor through the use of the in-circuit signal which has a higher amplitude than the output amplitude. CONSTITUTION:First, power supplies VSS and VCC of an inverter circuit consisting of MP4 and MN4, which drive a load capacitor CL, separate from power supplies VSL and VCH of the circuit which drives the inverter circuit and make the voltage value VSL be lower than VSS and make VCH be higher than VCC. As a result, the gate voltage of the MOS transistor, which drives the load capacitor CL, becomes large, eliminate the effect of the threshold voltage of p MOS MP4 and a high speed operation is realized. Furthermore, when power supply voltage becomes lower than 1.5 volts, a stable operation is realized without lowering the threshold voltage.
申请公布号 JPH04318394(A) 申请公布日期 1992.11.09
申请号 JP19910086549 申请日期 1991.04.18
申请人 HITACHI LTD;HITACHI DEVICE ENG CO LTD 发明人 KAWAJIRI YOSHIKI;KITSUKAWA GORO;KAWAHARA TAKAYUKI;AKIBA TAKESADA;ITO KIYOO
分类号 G11C11/409;G11C11/407;H01L21/8238;H01L21/8242;H01L27/092;H01L27/10;H01L27/108;H03K19/0175 主分类号 G11C11/409
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