| 摘要 |
PURPOSE: To cope with both electrical and laser programming by masking and etching an anti-fuse laver, containing an amorphous silicon-base insulator layer and depositing a heat-resistant layer such as metal silicide. CONSTITUTION: An anti-fuse layer 30 contains stoichiometric or off-stoichiometic amorphous layer of XiNx (0<x<1), SiOx (0<x<=2), or SiOx Ny (0<x<2<y<1.4). Then, when the anti-fuse layer 30 is heated, for example, at 500 deg.C or higher, chemical reduction reaction is generated between a Ti layer 24 and a SiO2 layer 32, a larger amount of Ti5 Si3 , TiSi, and/or TiSi2 than TiO, Ti2 O3 , Ti3 O5 , and/or TiO2 can be obtained, and a conductive compound for constituting a short-circuiting circuit is generated between Ti layers, thus coping with both electrical and laser programming. |
