| 摘要 |
PURPOSE:To provide a phase shift mask easy in defect inspection. CONSTITUTION:An SOG layer 2a containing colored ions, such as Co<2+>, Mn<3+>, or Ni<2+>, having absorption in the visible light region is formed on the surface of a substrate 1 almost transmitting exposure light (ultraviolet rays) on which light-shielding patterns are formed, and a part corresponding to the phase shift part is protected with an electron beam resist 3. Next, an unnecessary part of the layer 2a is removed by reactive ion etching, and the phase shift part 2 is formed. Finally, the resist 3 is removed, thus permitting the phase shift part 2 of the obtained phase shift mask to be discriminated from the disclosed transparent part of the substrate by microscopic observation. |
