| 摘要 |
PURPOSE:To obtain a quantum thin line having high carrier movability in which the line width can be controlled accurately in atomic level. CONSTITUTION:Semiconductor layers doped, at high concentration, with impurities having different lattice constants are deposited in multilayer to provide a quantum well 2 which is then etched obliquely at the upper face thereof to expose an inclining cross-section 9 and then an undoped semiconductor layer is grown thereon. The undoped semiconductor layer C is subjected to different stresses from the semiconductor layers A and B and the band structure thereof is distorted. Since the undoped semiconductor layer C has high electron affinity, carriers move therein. Consequently, a quantum thin line is formed in a part where the layer C contacts with one semiconductor layer A. |
