| 摘要 |
PURPOSE:To enhance the precision of pattern transfer to a semiconductor wafer by always uniformizing intensity of light passing through the phase shift mask. CONSTITUTION:The recessed part 5 is formed on the bottom side of a glass substrate 1 at the position just opposite to the position on which the shifter film 4 is formed and the depth t2 of the recessed part 5 is set so as to equalize the intensity of the light transmitted through only the glass substrate 1 as thick as t0 almost to that of the light transmitted through the shifter film 4 and the t1 thick glass substrate 1. |
