| 摘要 |
<p>PURPOSE: To provide elements with close intervals by depositing a second conductive layer on a sacrificial material, so that the former can be adapted to the latter and performing the anisotropic etching of a second conductive layer for forming a second element and the sacrificial material. CONSTITUTION: A sacrificial layer 22 is etched by suing a technique for eliminating the part of a layer that is not covered with an anode 28. For example, the sacrificial layer 22 due to silicon nitride is eliminated by plasma etching. Then, a wall part 26 of a nitride between an anode 28 and a cathode 16 is eliminated, a part 32 of the nitride is left remaining, and the support for the anode 28 is supported and raised to a level position that is equal to a part 18 of the raised cathode. Then, a passivation layer of silicon dioxide is deposited and subjected to patterning, thus forming a fixed window in contact.</p> |
