| 摘要 |
A process is disclosed for forming an interconnecting substrate for electronic components based on a cordierite ceramic, the substrate having a relatively small dielectric coefficient, allowing use in ultra high frequency applications. In one embodiment, the substrate is prepared from a powder which is sintered at approximately 980 degrees, allowing coatings of silver heated in an oxidizing atmosphere, or copper heated in a reducing atmosphere. In another embodiment, the powder is sintered at approximately 1350 DEG C., allowing coatings of a palladium base heated in an oxidizing atmosphere or molybdenum or tungsten base heated in reducing atmosphere. |
