DRAM-ARRAYS HOHER LEISTUNG MIT GRABEN-KONDENSATOREN.

摘要

In a semiconductor body are parallel spaced-apart elongated trenches, each with two flat continuous elongated facing walls with spaced apart capacitors along each trench wall in memory-cell regions. Chanstops electrically isolate adjacent capacitors from each other along each wall. Pref. the substrate electrically isolates the capacitors on one trench wall from the capacitors in the facing wall, and each capacitor includes a dielectric layer on its respective trench wall. A conductive layer overlies the dielectric layer to fill the trench. The bulk of the body is of one conductivity type and limited extent portions immediately adjacent the trench walls are of the opposite type.