| 摘要 |
PURPOSE:To obtain a high reliability by achieving a higher output than a hetero structure but is not as much as that of a rear-surface reflection-type light emitting diode in a same configuration as a conventional hetero structure and an easy production as compared with the rear-surface reflection-type light emitting diode simply by changing Zn concentration of a p-type GaAs substrate. CONSTITUTION:A p-type GaAs substrate 8 where concentration of Zn is equal to or more than 2.0X10<19>cm<-3> which is higher than before is used. A light emitting layer consisting of a p-type GaAlAs clad layer 4, a p-type GaAlAs activation layer 3, and an n-type GaAlAs window layer 2 is created exactly similarly as a conventional double hetero structure diode on this p-type GaAs substrate 8. An n-side electrode 1 and a p-side electrode 6 are formed on a surface and a rear of the obtained wafer for obtaining a light emitting diode. By enhancing Zn concentration of the substrate 8, a light 9 toward the substrate side which has been absorbed conventionally is reflected by the substrate 8 and is taken out as a reflection constituent light 10. |
