| 摘要 |
PURPOSE:To obtain a higher luminance and a high-speed response by a double hetero structure. CONSTITUTION:Fine recessed and projecting portions 17 for forming a projecting portion 18 which allows a high-concentration carrier to be implanted into an activation layer are provided on a surface of a p-type GaAs substrate 15 by etching. A p-type GaAlAs-clad layer 14 and an epitaxial layer in a double hetero structure of an n-type GaAlAs activation layer 13 a conductive type which is opposite to the p-type of the substrate and an n-type GaAlAs window layer 12 are allowed to grow on this recessed and projecting substrate 15. A light emitting diode is produced by forming electrodes 11 and 16 on a surface and a rear face of a wafer which is subjected to epitaxial growth, thus enabling a p-type carrier with a different conductive type from that of the n-type activation layer 13 to be implanted into the activation layer 13 in a high carrier concentration state from an upper portion of the projection portion of the substrate 18. |
