发明名称 NONVOLATILE TYPE SEMICONDUCTOR STORAGE DEVICE
摘要 <p>PURPOSE:No DC path exists when a nonvolatile type storage element is turned off, no DC path is generated when the nonvolatile type storage element is turned on because a transistor is turned off and no DC path is also generated in a complementary type serial transistor circuit. CONSTITUTION:An inverter circuit is provided by a complementary type serial transistor circuit which consists of a P type transistor C and an N type transistor D. The input to this circuit is located at the connecting point between a nonvolatile type storage element A and a transistor B of the power supply side and the output is the gate of the transistor B.</p>
申请公布号 JPH04313897(A) 申请公布日期 1992.11.05
申请号 JP19910080057 申请日期 1991.04.12
申请人 SHARP CORP 发明人 KITAGUCHI YUKIO;KUKI MASARU
分类号 G11C17/00;G11C16/06 主分类号 G11C17/00
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